When Intel finally shipped it at the 45-nanometer node in 2007, Gordon Moore called it the biggest change in transistor technology since the late 1960s. The breakthrough was not the material. It was learning how to process the material at scale.
Its curious that they picked this example. The challenge with HKMG was not the material itself, but how to integrate into into the transistor stack.
There were two completely different approaches: Gate first and replacement gate. Gate first is what the industry was already using for silicon oxide so everybody tried to go with as little change as possible. Only intel decided for replacement gate, which worked much better and reaped some other benefits on the way.
This was a watershed moment in the industry and ultimately led to some of the players dropping out of the cmos race.
But is this really a "scale-up" problem? It required development of novel manufacturing processes (atomic layer deposition), but was still mainly a process integration and device engineering topic.
The part of the thesis I have to agree with is that there is a data problem. The development above relies on executing lots of time consuming and tedious split experiments that often cannot be parallelized. The outcome of this relies heavily on the experience and diligence of the experimenters.
It's probably well suited for an "autoresearch" approach, bridging to the phyiscal world and dealing with the timescale is the challenge.